Room-temperature electron spin amplifier based on Ga(In)NAs alloys.
نویسندگان
چکیده
The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency of up to 1 GHz.
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ورودعنوان ژورنال:
- Advanced materials
دوره 25 5 شماره
صفحات -
تاریخ انتشار 2013